TP2-67 Novel Flat Band Voltage Extraction using Optical Substrate Current and Lateral Profiling of Trapped Charges in Localized Charge Trapping Flash Memory Cells
نویسندگان
چکیده
We proposed a novel extraction method for the flat band voltage (VFB) in MOSFETs by using optical excitation. Analyzing the optical substrate current (Isub,photo) by simulation and analytical model, it has been applied to charge trapped flash (CTF) memory cells for extracting the lateral profile of trapped charges. Because VFB of the programmed region is higher than that of non-programmed region in locally programmed CTF cells, there is multi-step response in Isub,photo-VG curves. The height and width of the multi-step are related to the programmed location and density of trapped charges and this technique is expected to be useful for lateral profiling of trapped charges.
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